Methods of sealing openings, and methods of forming integrated assemblies

ABSTRACT

Some embodiments include a method of forming an integrated assembly. A construction is formed to include a structure having an exposed surface, and to include an opening proximate the structure. An aperture extends into the opening. A first material is deposited to form a mass along the exposed surface of the structure. Particles are sputtered from the mass and across the aperture. The particles agglomerate to form a sealant material which traps a void within the opening.

TECHNICAL FIELD

Methods of sealing openings, and methods of forming integratedassemblies.

BACKGROUND

Memory is one type of integrated circuitry, and is used in computersystems for storing data. An example memory is DRAM (dynamicrandom-access memory). DRAM cells may each comprise a transistor incombination with a capacitor. The DRAM cells may be arranged in anarray; with wordlines extending along rows of the array, and digit linesextending along columns of the array. The wordlines may be coupled withthe transistors of the memory cells. Each memory cell may be uniquelyaddressed through a combination of one of the wordlines with one of thedigit lines.

Some DRAM may have the digit lines coupled to portions of activeregions, and may have the capacitors coupled with interconnects whichextend to other portions of the active regions. The interconnects may beproximate to the digit lines, and parasitic capacitance mayproblematically occur between the interconnects and the digit lines. Itwould be desirable to develop architectures which alleviate, or evenentirely prevent, such parasitic capacitance; and to develop methods offorming such architectures.

A strategy for alleviating parasitic capacitance is to utilize low-kregions between neighboring conductive components. Aparticularly-desirable low-k region is a void region. However, it may beproblematic to adequately seal void regions. Accordingly, it would bedesirable to develop methods suitable for sealing void regions. It wouldbe desirable for such methods to be applicable across a broad spectrumof integrated applications, including, but not limited to, solutionswhich alleviate or prevent the problem described above relative to theparasitic capacitance between interconnects and digit lines.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows diagrammatic cross-sectional side views of an exampleconstruction at example process stages of an example method.

FIG. 2 is a diagrammatic cross-sectional side view of an examplereaction chamber.

FIGS. 3-7 are diagrammatic views of a region of an example construction.FIGS. 3 and 5 are diagrammatic cross-sectional top-down views; and FIGS.4, 6 and 7 are diagrammatic cross-sectional side views. The view of FIG.3 is along the lines 3-3 of FIGS. 4 and 6. The view of FIG. 4 is alongthe lines 4-4 of FIGS. 3, 5, 6 and 7. The view of FIG. 5 is along thelines 5-5 of FIGS. 4, 6 and 7. The view of FIG. 6 is along the lines 6-6of FIGS. 3, 4 and 5. The view of FIG. 7 is along the lines 7-7 of FIGS.3, 4 and 5.

FIG. 8 is a view along the same cross-section as FIG. 4, and shows theconstruction of FIGS. 3-7 at an example process stage following that ofFIGS. 3-7.

FIG. 9 is a diagrammatic cross-sectional view of a region “Q” of FIG. 8at the same process stage as FIG. 8.

FIGS. 10-16 are diagrammatic cross-sectional views of the region “Q” ofFIG. 9 at example process stages which may follow the process stage ofFIG. 9.

FIG. 17 is a diagrammatic schematic view of a region of an examplememory array.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Some embodiments include methods of forming integrated assemblies inwhich sealant material is provided across openings to trap voids withinthe openings. The sealant material may be formed by a process whichincludes initially forming masses along structures associated with anintegrated assembly, with the structures being proximate openings.Subsequently, particles are sputtered from the masses and depositedacross the openings, with the deposited particles agglomerating to formthe sealant material. Some embodiments include architectures in whichvoids are along sidewalls of first conductive structures, and are cappedby insulative sealant material. Second conductive structures may bespaced from the first conductive structures by intervening regionscomprising the voids. The intervening regions have low permittivity dueto the low permittivity of the voids; and thus problematic parasiticcapacitance between the first and second conductive structures may beavoided. In some embodiments, the first conductive structures may bedigit lines, and the second conductive structures may be interconnectsextending to capacitors (or other suitable charge-storage structures).Example embodiments are described with reference to FIGS. 1-17.

Referring to FIG. 1, such shows a construction 300 at a preliminaryprocess stage “A”. The construction includes a base 302, and a pair ofstructures 304 and 306 over the base. An opening 308 is between thestructures 304 and 306, and an aperture 310 extends into the opening.

The base 302 may comprise any suitable composition(s); and may includeconductive material, insulative material and/or semiconductor material.Similarly, the structures 304 and 306 may comprise any suitablecomposition(s); and may include conductive material, insulative materialand/or semiconductor material. The base 302, structure 304 and structure306 may all comprise a same composition as one another; or at least oneof them may comprise a different composition relative to one or both ofthe others.

In some embodiments, the structure 306 may be considered to correspondto a pillar or rail. The structure 306 has a top surface 307, and hassidewall surfaces 309 extending downwardly from the top surface.

A mass 312 is formed along an upper region of the structure 306 as shownat a process stage “B” of FIG. 1. The mass 312 is along the top surface307 of the structure 306, and along upper segments of the sidewallsurfaces 309 of such structure.

The mass 312 may be formed by depositing a first material 314 along someof the exposed surfaces of the structure 306, with such deposition beingconducted under conditions which form the material along the highestfeatures of the construction 300.

The first material 314 may comprise any suitable composition; and insome embodiments may comprise one or more elements selected from group14 of the periodic table (e.g., may comprise silicon, carbon, germanium,etc.).

The deposition of the first material 314 may utilize any suitableprecursor(s); and in some embodiments may utilize a precursor comprisingone or both of a halide and a hydride of at least one element selectedfrom group 14 of the periodic table (e.g., may comprise one or more ofSiCl₄, SiH₄, etc.). The resulting first material 314 may comprise theelement selected from group 14 of the periodic table (e.g., silicon) incombination with one or more other components of the precursor(s). Forinstance, in some embodiments the first material 314 may comprisesilicon in combination with one or both of chlorine and hydrogen.

The deposition of the material 314 may utilize any suitable methodology;including, for example, one or more of chemical vapor deposition (CVD),plasma-enhanced chemical vapor deposition (PECVD), atomic layerdeposition (ALD), etc.

Example conditions which may be utilized for the deposition of thematerial 314 may include a bias voltage on the construction 300 within arange of from about 50 volts (V) to about 2000 V, while the constructionis in a suitable reaction chamber (e.g., a dry etch chamber). Theconditions may include flow of one or more suitable precursors into thereaction chamber (e.g., silicon tetrachloride, SiCl₄) together with oneor more suitable inert carrier gases (e.g., argon, nitrogen, helium,etc.). The deposition may be conducted while maintaining an ambientwithin the reaction chamber to a temperature within a range of fromabout 10° C. to about 100° C., and to a pressure within a range of fromabout 1 millitorr (mTorr) to about 200 mTorr. Plasma conditions may ormay not be utilized during the deposition. If plasma conditions areutilized, the plasma may be remote relative to the construction 300 ormay directly contact surfaces of the construction 300.

Particles are sputtered from the mass 312, and such particlesagglomerate to form a sealant material 316 which extends across theaperture 310 and traps a void 318 within the opening 308, as shown at aprocess stage “C” of FIG. 1. In some embodiments, some of the sealantmaterial 316 may extend into the opening 308. However, the sealantmaterial does not generally fill the opening, and accordingly there willgenerally be a void remaining within the opening.

The conditions utilized to sputter the particles from the mass 312 maybe oxidizing conditions, and the sealant material 316 may comprise anoxidized element from the first material 314 of process stage “B”. Forinstance, in some embodiments the first material 314 may comprise one ormore elements from group 14 of the periodic table (e.g., silicon) andthe sealant material 316 may comprise one or more oxides of the elementsfrom group 14 of the periodic table (e.g., may comprise silicondioxide). The oxidizing conditions may also convert the first material314 of the mass 312 into a material 320 comprising oxidized componentsof the first material 314. For instance, the material 320 may compriseoxides of one or more elements from group 14 of the periodic table.Further, the oxidizing conditions may remove halides (e.g., chlorine)and/or hydrogen from the material 314 so that the material 320 and thesealant material 316 consist of, or consist essentially of, one or moreoxides of elements of group 14 of the periodic table (e.g., siliconoxide, germanium oxide, etc.).

Example conditions which may be utilized for the sputtering of particlesfrom the mass 312 and the associated formation of the sealant material316 may include a bias voltage on the construction 300 within a range offrom about 50 volts (V) to about 2000 V, while the construction is in asuitable reaction chamber (e.g., a dry etch chamber). The sputtering ofparticles from mass 312 may occur in a same reaction chamber as wasutilized for the forming of the mass 312, or may occur in a differentreaction chamber from that utilized for forming the mass. In someembodiments, the bias voltage used during the deposition of the mass 312may be referred to as a first bias voltage, and the bias voltage usedduring the sputtering of particles from the mass 312 may be referred toas a second bias voltage. The first and second bias voltages may be thesame as one another, or may be different relative to one another.

The conditions used during the sputtering of particles from the mass 312may include flow of one or more suitable oxidants into the reactionchamber (e.g., diatomic oxygen, O₂; ozone, O₃; hydrogen peroxide, H₂O₂;etc.) together with one or more suitable inert carrier gases (e.g.,argon, nitrogen, helium, etc.). The sputtering of particles from themass 312 may be conducted while maintaining an ambient within thereaction chamber to a temperature within a range of from about 10° C. toabout 100° C., and to a pressure within a range of from about 1millitorr (mTorr) to about 500 mTorr. Plasma conditions may or may notbe utilized during the sputtering. If plasma conditions are utilized,the plasma may be remote relative to the construction 300 or maydirectly contact surfaces of the construction 300.

In some embodiments, the deposition of mass 312 (process step “B”) andthe sputtering of particles from the mass to form sealant material 316(process step “C”) are conducted in the same reaction chamber as oneanother. In such embodiments, the sputtering may occur simultaneouslywith some of the deposition (i.e., chemical species associated with thedeposition may be in the reaction chamber at the same time as chemicalspecies associated with the sputtering). Alternatively, the sputteringmay occur substantially entirely after the deposition (i.e., chemicalspecies associated with the sputtering may be provided in the reactionchamber only after the chemical species associated with the depositionare entirely evacuated from the chamber, or are at least substantiallyentirely evacuated from the chamber).

In embodiments in which the sputtering of particles from the mass 312occurs simultaneously with at least some of the deposition of the mass312, the ambient within the reaction chamber utilized for the sputteringand deposition may include a halogen-containing precursor (e.g., silicontetrachloride) and/or a hydrogen-containing precursor (e.g., silane) incombination with one or more oxygen-containing chemical species (e.g.,diatomic oxygen, ozone, hydrogen peroxide, etc.). The chemical speciesmay or may not be dispersed within a plasma.

In some embodiments, pinholes or other defects may extend partially orentirely through the sealant material 316. Such defects may or may notbe problematic. To the extent that the defects are consideredproblematic, such may be alleviated by treating the sealant material.For instance, the sealant material may be subjected to a thermal annealat a temperature of at least about 500° C. to collapse pinholes and/orotherwise cure problematic defects. Alternatively, or additionally, alayer may be deposited over the sealant material to cover the pinholesand/or other defects. In some embodiments, such layer may compriseinsulative material; such as, for example, silicon nitride and/orsilicon dioxide. Process step “D” shows construction 300 after anoptional layer of material 322 is provided over the sealant material316. The material 322 may comprise a same composition as the sealantmaterial 316 (e.g., both may comprise, consist essentially of, orconsist of silicon oxide); or may comprise a different compositionrelative to the sealant material (e.g., the sealant material 316 maycomprise silicon dioxide while the material 322 comprises siliconnitride).

The material 322 may be provided to any suitable thickness; and in someembodiments may have a thickness within a range of from about 10 Å toabout 500 Å.

The various process stages of FIG. 1 may be conducted in any suitablereaction chamber, or any suitable combination of reaction chambers. FIG.2 diagrammatically illustrates an example reaction chamber 400. A chuck402 is provided to retain a substrate 404 within the chamber. Thesubstrate 404 may be a semiconductor wafer comprising a constructionanalogous to the construction 300 of FIG. 1. The chamber 400 includes aninterior region 406 which retains an ambient within the chamber.Openings 408 and 410 extend through a wall of the chamber, and areutilized to flow materials into and out of the chamber. Valves (notshown) may be provided across the openings 408 and 410.

The voids 318 formed utilizing the processing of FIG. 1 may be usefulduring fabrication of integrated circuitry. For instance, the voids maycorrespond to low-k (low dielectric constant) insulative regionssuitable for electrically isolating neighboring conductive structuresfrom one another. An advantage of utilizing low-k regions is that suchmay reduce parasitic capacitance as compared to insulative regionshaving higher dielectric constants.

An example application for processing analogous to that of FIG. 1 is thefabrication of integrated DRAM. An example process for fabricating DRAMis described with reference to FIGS. 3-17.

Referring to FIGS. 3-7, a portion of an example construction 10 isillustrated. Such construction may be formed with any suitablemethodology. The construction 10 is an example of an initialconstruction which may be utilized for some of the embodiments describedherein, and it is to be understood that other constructions may beutilized alternatively to the construction 10.

The construction 10 includes a plurality of active regions 12 extendingupwardly from a semiconductor base 14. Some of the active regions 12 arelabeled as 12 a-f so that they may be distinguished relative to oneanother, and relative to others of the active regions. All of the activeregions 12 may be substantially identical to one another; with the term“substantially identical” meaning identical to within reasonabletolerances of fabrication and measurement.

The active regions 12 and semiconductor base 14 comprise semiconductormaterial 16. Such semiconductor material may comprise any suitablecomposition(s); and in some embodiments may comprise, consistessentially of, or consist of one or more of silicon, germanium, III/Vsemiconductor material (e.g., gallium phosphide), semiconductor oxide,etc.; with the term III/V semiconductor material referring tosemiconductor materials comprising elements selected from groups III andV of the periodic table (with groups III and V being old nomenclature,and now being referred to as groups 13 and 15). In some embodiments, thesemiconductor material 16 may comprise, consist essentially of, orconsist of appropriately-doped silicon. The silicon may be in anysuitable form; and in some embodiments may be monocrystalline silicon.

The base 14 may be referred to as a semiconductor substrate. The term“semiconductor substrate” means any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductor substrates described above.

The active regions 12 are spaced from one another by intervening regionscomprising insulative material 18. The insulative material 18 maycomprise any suitable composition or combination of compositions; and insome embodiments may comprise, consist essentially of, or consist ofsilicon dioxide.

Wordlines (i.e., access lines) 20 extend along a first direction whichmay ultimately correspond to a row direction of a memory array; anddigit lines (i.e., sense lines, bitlines) 22 extend along a seconddirection which may ultimately correspond to a column direction of thememory array. In the shown embodiment, the second direction of thebitlines 22 is substantially orthogonal to the first direction of thewordlines 20. The wordlines are not indicated in FIG. 3 in order toenable the active regions 12 to be fully illustrated. In practice, thewordlines pass through regions of the active regions 12 as shown in FIG.5.

The wordlines 20 comprise conductive material 24, and the bitlines 22comprise conductive material 26. The conductive materials 24 and 26 maycomprise any suitable electrically conductive composition(s); such as,for example, one or more of various metals (e.g., titanium, tungsten,cobalt, nickel, platinum, ruthenium, etc.), metal-containingcompositions (e.g., metal silicide, metal nitride, metal carbide, etc.),and/or conductively-doped semiconductor materials (e.g.,conductively-doped silicon, conductively-doped germanium, etc.). In someembodiments, the conductive materials 24 and 26 may be a samecomposition as one another; and in other embodiments the conductivematerials 24 and 26 may be different compositions relative to oneanother.

Insulative material 28 is over the wordlines 20. Such insulativematerial may comprise any suitable composition(s); and in someembodiments may comprise, consist essentially of, or consist of silicondioxide. The insulative 28 may be the same composition as the insulativematerial 18, or may be a different composition relative to theinsulative material 18.

Gate dielectric material 30 extends around lower regions of thewordlines 20, and is between the wordlines and the active regions 12.The gate dielectric material 30 may comprise any suitablecomposition(s); and in some embodiments may comprise, consistessentially of, or consist of silicon dioxide.

The wordlines 20 comprise transistor gates along the active regions 12.Each of the active regions may be considered to comprise adigit-line-contact portion 32, and a capacitor-contact portion 34. Thetransistor gates electrically couple the digit-line-contact portionswith the capacitor-contact portions. The digit-line-contact portions 32and the capacitor-contact portions 34 are indicated in FIG. 5 to assistthe reader in understanding the relative locations of the wordlines 20relative to the digit-line-contact portions 32 and the capacitor-contactportions 34. However, it is to be understood that the digit-line-contactportions 32 and the capacitor-contact portions 34 are actually higher upon the active regions than the section of FIG. 5, as is indicated inFIGS. 4 and 6.

The digit-line-contact portions 32 are coupled with electricalinterconnects 36, which in turn are coupled with the digit lines 22. Theinterconnects 36 comprise conductive material 38. The conductivematerial 38 may comprise any suitable electrically conductivecomposition(s); such as, for example, one or more of various metals(e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium, etc.),metal-containing compositions (e.g., metal silicide, metal nitride,metal carbide, etc.), and/or conductively-doped semiconductor materials(e.g., conductively-doped silicon, conductively-doped germanium, etc.).

The digit lines 22 are labeled as 22 a-d so that they may bedistinguished relative to one another. FIG. 4 shows a cross-section inwhich the digit lines 22 a and 22 c are coupled with digit-line-contactlocations 32, and in which the digit lines 22 b and 22 d are passingover the capacitor-contact locations 34. The passing digit lines 22 band 22 d are spaced from the underlying capacitor-contact locations 34by insulative materials 40 and 42. Such insulative materials maycomprise any suitable composition(s); and in some embodiments maycomprise, consist essentially of, or consist of silicon dioxide, siliconnitride, etc. The insulative materials 40 and 42 may be a samecomposition as one another, or may be different compositions relative toone another.

The digit lines 22 may be considered to be conductive structures havingtop surfaces 41 and sidewall surfaces 43; with each of the digit lineshaving a pair of opposing sidewall surfaces 43 along the cross-sectionof FIG. 4.

Insulative material 44 is over the top surfaces 41 of the conductivestructures 22. The insulative material 44 may comprise any suitablecomposition(s); and in some embodiments may comprise, consistessentially of, or consist of silicon nitride.

Insulative material 46 is along the sidewall surfaces 43 of theconductive structures 22. The insulative material 46 may comprise anysuitable composition(s); and in some embodiments may comprise, consistessentially of, or consist of silicon nitride. It is noted that in someembodiments the materials 44 and 46 may comprise a common composition(e.g., silicon nitride), and accordingly may merge into a singleinsulative structure.

FIG. 4 shows the conductive structures 22 spaced from one another byintervening regions 48. The insulative material 46 may be considered tobe formed within such intervening regions.

Referring to FIG. 8, a region of construction 10 is shown at aprocessing stage following that of FIGS. 3-7; with such region beingshown along the same cross-section as described above relative to FIG.4.

The processing stage of FIG. 8 has additional insulative materials 50and 52 formed within the intervening regions 48. The insulativematerials 50 and 52 may comprise any suitable composition(s). In someembodiments, the material 50 is a sacrificial material which may beremoved selectively relative to the materials 44, 46 and 52. In someembodiments, the sacrificial material 50 may comprise, consistessentially of, or consist of silicon dioxide; while the materials 44,46 and 52 may all comprise, consist essentially of, or consist ofsilicon nitride.

In some embodiments, the materials 46, 50 and 52 may be consideredtogether to form rails 54, with such rails extending into and out of thepage relative to the cross-section of FIG. 8 (i.e., with such railsextending along the digit lines 22 shown in FIG. 3).

The rails 54 may be considered to comprise the sacrificial material 50between a pair of panels 56; with such panels comprising thenon-sacrificial materials 46 and 52.

Conductive material 58 is formed within the intervening regions 48between the rails 54. The conductive material 58 forms conductiveinterconnects 60 which extend to the capacitor-contact locations 34 ofthe active regions 12.

The conductive material 58 may comprise any suitable electricallyconductive composition(s); such as, for example, one or more of variousmetals (e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium,etc.), metal-containing compositions (e.g., metal silicide, metalnitride, metal carbide, etc.), and/or conductively-doped semiconductormaterials (e.g., conductively-doped silicon, conductively-dopedgermanium, etc.).

The processing which follows pertains to structures fabricated within anupper portion of the construction 10 of FIG. 8. Such upper portion isdiagrammatically illustrated in FIG. 8 as corresponding to a region “Q”.The region “Q” is shown in FIG. 9, and is utilized for describing theembodiments which follow. The processing stage of FIG. 9 is identical tothat of FIG. 8.

Referring to FIG. 10, portions of the materials 50, 52 and 58 within theintervening regions 48 are recessed. Such may be accomplished utilizinga mask (not shown) to protect some regions of the construction 10, whileleaving other regions exposed to suitable etching which recesses theexposed regions. Subsequently, the protective mask may be removed toleave the construction shown in FIG. 10. Alternatively, at least someportions of the mask may remain at the process stage of FIG. 10.

Referring to FIG. 11, the sacrificial material 50 (FIG. 10) is removedselectively relative to the materials 44, 46, 52 and 58 to leaveopenings 62 remaining between the panels 56. The bottoms of the openings62 are not shown in FIG. 11; but would be capped by the materials 18 and40 shown in FIG. 8.

Referring to FIG. 12, the construction 10 is shown at a processing stagesubsequent to that of FIG. 11, and analogous to the stage “B” of FIG. 1.Specifically, the materials 26, 38, 44 and 46 may be considered to formstructures 306 analogous to the structures described above withreference to FIG. 1.

Masses 312 are formed over tops of the insulative materials 44 and 46,and along upper segments of the sides of the structures 306.

The masses 312 are analogous to the mass described above with referenceto FIG. 1, and comprise the material 314. The masses 312 of FIG. 12 maybe formed utilizing the same processing as described with reference toFIG. 1.

Referring to FIG. 13, the construction 10 is shown at a processing stagesubsequent to that of FIG. 12. Specifically, particles are sputteredfrom the masses 312 and utilized to form the sealant material 316 whichextends across the openings 62 and traps voids 318 within the openings(i.e., processing analogous to that of the process the stage “C” of FIG.1). The sealant material 316 of FIG. 13 may be generated utilizing theprocess conditions of FIG. 1.

An optional process is to treat the sealant material 316 to fill anypinholes present in such material and/or to cure other potentialdefects. Such treatment may comprise methodology described above withreference to a process stage “D” of FIG. 1. For instance, themethodology may comprise a thermal treatment and/or may compriseformation of a layer of material 322 over the sealant material 316. Theoptional layer of material 322 is shown in dashed-line view in FIG. 13,with the dashed-line view being utilized to emphasize that the layer isoptional. In embodiments in which the material 322 is utilized, suchmaterial may be referred to as a second insulative material todistinguish it from the first insulative material 44.

Referring to FIG. 14, insulative material 68 is formed over the masses320, over the insulative structures under such masses (i.e., thestructures comprising insulative 44), across the sealant material 316,and across the conductive interconnects 60. In some embodiments, themasses 320 may be removed prior to forming the insulative material 68.The insulative material 68 extends over the optional material 322. Insome embodiments, the insulative material 68 may be referred to as asecond insulative material to distinguish it from the first insulativematerial 44; and in some embodiments the insulative material 68 may bereferred to as a third insulative material to distinguish it from thefirst and second insulative materials 44 and 322.

The insulative material 68 may comprise any suitable composition(s); andin some embodiments may comprise, consist essentially of, or consist ofsilicon nitride.

Referring to FIG. 15, portions of the second insulative material 68, thesealant material 316, the optional material 322 (if such optionalmaterial is present) and the material 320 of the masses 312 are removed.Such removal exposes regions 70 of the conductive interconnects 60. Theremoval of materials 316, 322, 320 and 68 may be accomplished utilizinganisotropic etching of such materials, which forms the materials 68,316, 322 (if present) and 320 into spacers 72.

Referring to FIG. 16, the exposed regions 70 of the interconnects 60 arecoupled with capacitors 74. Each capacitor has a node 75 connected withan interconnect 60, and has another node 77 connected with a referencevoltage 78. The reference voltage may be ground or any other suitablevoltage. The nodes 75 and 77 are spaced from one another by dielectricregions 79. Such dielectric regions may comprise any suitable dielectricmaterial(s).

The capacitors 74 are examples of charge-storage devices which may becoupled with the conductive interconnects 60. In other embodiments,other suitable charge-storage devices may be utilized. Accordingly, itis to be understood that the so-called capacitor-contact locations 34may be more generically referred to as charge-storage-device-contactlocations.

The configuration of FIG. 16 comprises conductive structures 22 havingtop surfaces 41 and sidewall surfaces 43 (only some of which arelabeled). The insulative material 44 is over the top surfaces. The voids318 are along the sidewall surfaces, and are laterally spaced from suchsidewall surfaces by the insulative material 46. In some embodiments,the insulative materials 44 and 46 may be referred to as first andsecond insulative materials, respectively. Such first and secondinsulative materials may comprise a same composition as one another (forinstance, may both comprise silicon nitride), or may comprise differentcompositions relative to one another.

The voids 318 have low dielectric constants, and thus form regions oflow permittivity between the digit lines 22 and the conductiveinterconnects 60. Such low-permittivity regions may reduce, or evenentirely eliminate, problematic parasitic capacitance between theconductive structures 22 and the conductive interconnects 60 as comparedto conventional configurations lacking such low-permittivity regions.

The configuration of FIG. 16 may be considered to correspond to a regionof a memory array 90 (for instance, a DRAM array). The memory arraycomprises memory cells which include an access transistor (e.g., atransistor comprising a gate along one of the wordlines 20 of FIGS. 3-7)coupled with a charge-storage device (e.g., a capacitor 74). An examplememory array 90 is described with reference to FIG. 17. The memory arrayincludes digit lines (DL1-DL4) corresponding to the digit lines 22 a-d,and includes wordlines (WL1-WL4) corresponding to the wordlines 20.Memory cells 80 comprise transistors 82 coupled with the capacitors 74.Each of the transistors comprises a gate 84 along one of the wordlines20. Each of the memory cells 80 is uniquely addressed through thecombination of a wordline and a digit line.

The memory array 90 of FIG. 17 is a DRAM array in which each of thememory cells 80 comprises a transistor and a capacitor. In otherembodiments, configurations analogous to that of FIG. 16 may be utilizedin other memory arrays. Also, it is to be understood that themethodology described herein may be utilized to form other integratedassemblies in addition to, or alternatively to, memory arrays. Forinstance, the methodology may be applied to the fabrication of logic,sensors, etc.

The assemblies and structures discussed above may be utilized withinintegrated circuits (with the term “integrated circuit” meaning anelectronic circuit supported by a semiconductor substrate); and may beincorporated into electronic systems. Such electronic systems may beused in, for example, memory modules, device drivers, power modules,communication modems, processor modules, and application-specificmodules, and may include multilayer, multichip modules. The electronicsystems may be any of a broad range of systems, such as, for example,cameras, wireless devices, displays, chip sets, set top boxes, games,lighting, vehicles, clocks, televisions, cell phones, personalcomputers, automobiles, industrial control systems, aircraft, etc.

Unless specified otherwise, the various materials, substances,compositions, etc. described herein may be formed with any suitablemethodologies, either now known or yet to be developed, including, forexample, atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), etc.

The terms “dielectric” and “insulative” may be utilized to describematerials having insulative electrical properties. The terms areconsidered synonymous in this disclosure. The utilization of the term“dielectric” in some instances, and the term “insulative” (or“electrically insulative”) in other instances, may be to providelanguage variation within this disclosure to simplify antecedent basiswithin the claims that follow, and is not utilized to indicate anysignificant chemical or electrical differences.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. Thedescriptions provided herein, and the claims that follow, pertain to anystructures that have the described relationships between variousfeatures, regardless of whether the structures are in the particularorientation of the drawings, or are rotated relative to suchorientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections, unless indicatedotherwise, in order to simplify the drawings.

When a structure is referred to above as being “on”, “adjacent” or“against” another structure, it can be directly on the other structureor intervening structures may also be present. In contrast, when astructure is referred to as being “directly on”, “directly adjacent” or“directly against” another structure, there are no interveningstructures present.

Structures (e.g., layers, materials, etc.) may be referred to as“extending vertically” to indicate that the structures generally extendupwardly from an underlying base (e.g., substrate). Thevertically-extending structures may extend substantially orthogonallyrelative to an upper surface of the base, or not.

Some embodiments include a method of forming an integrated assembly. Aconstruction is formed to include a structure having an exposed surface,and to include an opening proximate the structure. An aperture extendsinto the opening. A first material is deposited to form a mass along theexposed surface of the structure. Particles are sputtered from the massto form a sealant material which extends across the aperture and traps avoid within the opening.

Some embodiments include a method of forming an integrated assembly. Aconstruction is formed to include, along a cross-section, a conductivestructure having a top surface, and a pair of opposing sidewall surfacesextending downwardly from the top surface. The construction alsoincludes insulative material over the top surface, and includes railsalong the sidewall surfaces. Each of the rails comprises a sacrificialmaterial along a panel of a non-sacrificial material. The sacrificialmaterial is removed to leave openings between the sidewall surfaces andthe panels of the non-sacrificial material. A mass is formed over a topof the insulative material and along upper segments of sides of theinsulative material. Particles are sputtered from the mass to form asealant material which extends across the openings and traps voidswithin the openings.

Some embodiments include a method of forming an integrated assembly. Aconstruction is formed to include, along a cross-section, a pair ofdigit lines spaced from one another by an intervening region. Each ofthe digit lines has a top surface, and a pair of opposing sidewallsurfaces extending downwardly from the top surface. The constructionincludes insulative structures over the top surfaces, and includes railsalong the sidewall surfaces. The rails comprise a sacrificial materialsandwiched between a pair of panels. The construction includes aconductive interconnect within the intervening region. The insulativestructures comprise a first insulative material. The sacrificialmaterial is removed to leave openings between the panels. Masses areformed over tops of the insulative structures and along upper segmentsof sides of the insulative structures. Particles are sputtered from themasses to form a sealant material which extends across the openings andcovers voids within the openings. A second insulative material is formedacross the insulative structures, across the sealant material and acrossthe conductive interconnect. A portion of the second insulative materialis removed to expose a region of the conductive interconnect. Theexposed region of the conductive interconnect is coupled with acharge-storage device.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

I claim:
 1. A method of forming an integrated assembly, comprising:forming a construction to include a structure having an exposed surface,and an opening proximate the structure; the construction including anaperture extending into the opening; depositing a first material to forma mass along the exposed surface of the structure; and sputteringparticles from the mass to form a sealant material which extends acrossthe aperture and traps a void within the opening.
 2. The method of claim1 wherein the structure has, along a cross-section, a top surface and apair of opposing sidewall surfaces extending downwardly from the topsurface; and wherein the depositing forms the mass to be along the topsurface of the structure and along upper segments of the sidewallsurfaces of the structure.
 3. The method of claim 1 further comprisingtreating the sealant material to fill any pinholes present in thesealant material.
 4. The method of claim 3 wherein the treatingcomprises deposition of a layer of insulative material over the sealantmaterial.
 5. The method of claim 4 wherein the insulative materialcomprises a same composition as the sealant material.
 6. The method ofclaim 5 wherein the insulative material and the sealant material bothcomprise silicon dioxide.
 7. The method of claim 4 wherein theinsulative material comprises a different composition than the sealantmaterial.
 8. The method of claim 7 wherein the insulative materialcomprises silicon nitride, and wherein the sealant material comprisessilicon dioxide.
 9. The method of claim 1 wherein the sputtering occurssimultaneously with some of the deposition.
 10. The method of claim 9wherein the deposition and sputtering are conducted within a reactionchamber in the presence of chemical species which include SiCl₄ togetherwith one or more of O₂, O₃, H₂O₂.
 11. The method of claim 1 wherein thesputtering occurs substantially entirely after the deposition.
 12. Themethod of claim 1 wherein the mass comprises one or more elementsselected from group 14 of the periodic table.
 13. The method of claim 1wherein the mass comprises silicon.
 14. The method of claim 1 whereinthe mass comprises at least one element selected from group 14 of theperiodic table; and wherein the depositing utilizes a precursorcomprising one both of a halide or a hydride of said at least oneelement.
 15. The method of claim 14 wherein the mass comprises siliconin combination with one or both of chlorine and hydrogen.
 16. The methodof claim 15 wherein the sealant material comprises silicon dioxide. 17.The method of claim 16 wherein the sputtering is conducted underoxidizing conditions.
 18. The method of claim 17 wherein the sputteringis conducted utilizing one or both of ozone and hydrogen peroxide.
 19. Amethod of forming an integrated assembly, comprising: forming aconstruction to include, along a cross-section, a conductive structurehaving a top surface, and a pair of opposing sidewall surfaces extendingdownwardly from the top surface; the construction also includinginsulative material over the top surface, and including rails along thesidewall surfaces; each of the rails comprising a sacrificial materialalong a panel of a non-sacrificial material; removing the sacrificialmaterial to leave openings between the sidewall surfaces and the panelsof the non-sacrificial material; forming a mass over a top of theinsulative material and along upper segments of sides of the insulativematerial; and sputtering particles from the mass to form a sealantmaterial which extends across the openings and traps voids within theopenings.
 20. The method of claim 19 further comprising treating thesealant material to fill any pinholes present in the sealant material.21. The method of claim 20 wherein the insulative material is a firstinsulative material, and wherein the treating comprises deposition of alayer of a second insulative material over the sealant material.
 22. Themethod of claim 19 wherein the mass comprises one or more elementsselected from group 14 of the periodic table.
 23. The method of claim 19wherein the mass comprises silicon.
 24. The method of claim 19 whereinthe sealant material comprises silicon dioxide.
 25. The method of claim19 wherein the sputtering is conducted under oxidizing conditions.
 26. Amethod of forming an integrated assembly, comprising: forming aconstruction to include, along a cross-section, a pair of digit linesspaced from one another by an intervening region; each of the digitlines having a top surface, and a pair of opposing sidewall surfacesextending downwardly from the top surface; the construction includinginsulative structures over the top surfaces, and including rails alongthe sidewall surfaces; the rails comprising a sacrificial materialsandwiched between a pair of panels; the construction including aconductive interconnect within the intervening region; the insulativestructures comprising a first insulative material; removing thesacrificial material to leave openings between the panels; formingmasses over tops of the insulative structures and along upper segmentsof sides of the insulative structures; sputtering particles from themasses to form a sealant material which extends across the openings andcovers voids within the openings; forming a second insulative materialacross the insulative structures, across the sealant material and acrossthe conductive interconnect; removing a portion of the second insulativematerial to expose a region of the conductive interconnect; and couplingthe exposed region of the conductive interconnect with a charge-storagedevice.
 27. The method of claim 26 further comprising treating thesealant material to fill any pinholes present in the sealant material.28. The method of claim 27 wherein the treating comprises deposition ofa layer of a third insulative material over the sealant material. 29.The method of claim 28 wherein the third insulative material comprises asame composition as the sealant material.
 30. The method of claim 28wherein the third insulative material comprises a different compositionthan the sealant material.
 31. The method of claim 26 wherein the masscomprises one or more elements selected from group 14 of the periodictable.
 32. The method of claim 26 wherein the sealant material comprisessilicon dioxide.